TSMC, Samsung, and Intel shore up support with ASML to deploy larger High-NA EUV photomasks — 6×12-inch photomask transition may take years despite unified effort

📋总体概括

ASML正与台积电、三星、英特尔三大芯片巨头联合推动6×12英寸大尺寸光掩模的开发，以配合High-NA EUV光刻机部署。当前High-NA EUV因掩模尺寸限制需拼接曝光制造大芯片，新掩模可免除拼接、降低成本与复杂度。但业内评估认为，这一掩模规格转换可能耗时数年，短期内High-NA EUV仍需依赖现有6×6英寸掩模体系运行，产业面临长期过渡期。