资讯🔥8.0
The current state of Hybrid Bonding in 2026 — TSMC sits at 6 microns and the HBM delay that nobody expected
📌 概要
混合键合（铜对铜直接连接技术）正取代焊料微凸点用于3D芯片堆叠。2026年该技术在逻辑芯片上已进入大规模量产，台积电键合间距达6微米；但在HBM存储器领域，进展却意外推迟，厂商部署时间点仍不明朗。
⚡ 关键要点
- ▸混合键合以铜对铜连接取代焊料微凸点，用于3D芯片堆叠
- ▸台积电在逻辑芯片上已量产混合键合，键合间距达6微米
- ▸HBM存储器的混合键合量产计划意外推迟
Hybrid bonding, the copper-to-copper joining technique that replaces solder microbumps in 3D chip stacks, is in high-volume production on logic and freshly postponed on memory.