资讯🔥8.0
Samsung teases new HBM5 with twice the performance of HBM4E —ambitious data transfer rates could hint at 4,096-bit interface
📌 概要
三星预告新一代HBM5内存，性能可达HBM4E的两倍，单堆栈带宽预计达4 TB/s，或采用4096-bit接口，预计于2020年代末量产。该技术将使AI加速器的聚合内存带宽达到约100 TB/s，进一步强化三星在AI内存领域的竞争布局。
⚡ 关键要点
- ▸HBM5性能达HBM4E两倍，单堆栈带宽4 TB/s
- ▸或采用4096-bit数据传输接口
- ▸预计2020年代末落地，AI加速器聚合带宽可达100 TB/s
Samsung expects HBM5 to deliver 4 TB/s of bandwidth per stack by late 2020s, which will enable AI accelerators with aggregated memory bandwidth of around 100 TB/s.